DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, SK | ko |
dc.contributor.author | Park, YJ | ko |
dc.contributor.author | Kim, EK | ko |
dc.contributor.author | Park, CJ | ko |
dc.contributor.author | Cho, HY | ko |
dc.contributor.author | Lim, YS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Lee, C | ko |
dc.date.accessioned | 2013-03-04T00:24:07Z | - |
dc.date.available | 2013-03-04T00:24:07Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-06 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, pp.4378 - 4381 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/81065 | - |
dc.description.abstract | We have observed the red shift of the emission wavelength in InGaAs/GaAs quantum dots by employing a very thin AlGaAs insertion layer (IL). The thin AlGaAs layer of less than 10 nm in thickness,vas inserted immediately after the formation of self-assembled InGaAs quantum dots (QDs) on a GaAs buffer layer. The low, temperature ( 15 K) photoluminescence peak typically appears at around 1.1 mum in the sample without IL whereas it is red-shifted up to 1.25 mum a the 11, thickness increases. It is interpreted that the thin AlGaAs IL releases the local strain around QDs asymmetrically. | - |
dc.language | English | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.subject | 1.3 MU-M | - |
dc.subject | TEMPERATURE | - |
dc.subject | GAAS | - |
dc.subject | LASER | - |
dc.subject | OPERATION | - |
dc.subject | GAINNAS | - |
dc.title | Role of insertion layer controlling wavelength in InGaAs quantum dots | - |
dc.type | Article | - |
dc.identifier.wosid | 000177169700074 | - |
dc.identifier.scopusid | 2-s2.0-0036614044 | - |
dc.type.rims | ART | - |
dc.citation.volume | 41 | - |
dc.citation.beginningpage | 4378 | - |
dc.citation.endingpage | 4381 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Park, SK | - |
dc.contributor.nonIdAuthor | Park, YJ | - |
dc.contributor.nonIdAuthor | Kim, EK | - |
dc.contributor.nonIdAuthor | Park, CJ | - |
dc.contributor.nonIdAuthor | Cho, HY | - |
dc.contributor.nonIdAuthor | Lim, YS | - |
dc.contributor.nonIdAuthor | Lee, C | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | AlGaAs insertion layer (IL) | - |
dc.subject.keywordAuthor | red-shift | - |
dc.subject.keywordAuthor | InGaAs/GaAs quantum dots | - |
dc.subject.keywordAuthor | local strain | - |
dc.subject.keywordAuthor | metal organic chemical vapor deposition | - |
dc.subject.keywordPlus | 1.3 MU-M | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | LASER | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | GAINNAS | - |
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