Fabrication of Novel Active Resistor Using Selective Metal Organic ChemicalVapor Deposition(MOCVD) for Monolithic Integration.

Abstract

Using selective epitaxial growth, we fabricated an active resistor in the floated electron channel field effect transistor(FECFET) structure. Compared to the active resistor in the metal semiconductor FET(MESFET) structure, it has large sheet resistance, depending on the number of stripes and etching time. For two SiO2 stripes, it is 600 Omega /w = 50 mum and for twenty SiO2 stripes, its sheet resistance can reach 6000 Omega/rectangle. Under light illumination, its current increases nonlinearly with the input light power like two-terminal FET without a gate.