Electrical and magnetic properties of Mn-doped ZnO

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We report on the electrical and magnetic properties of Mn-doped ZnO, Zn1-xMnxO, ceramics prepared by a solid-state reaction method. X-ray diffraction analysis shows that the Mn ion can be dissolved into ZnO up to similar to20 mol% without changing the wurtzite structure. We find from Hall measurements for Zn1-xMnxO with an additional doping of 1 mol% Ga that the Mn doping in ZnO decreases electrical conductivity along with carrier concentration. For our ceramics, electrical resistivity decreases with increase of temperature, showing semiconducting behavior. We examine the temperature dependence of the magnetization for both field cooling and zero-field cooling.
Publisher
TAYLOR FRANCIS LTD
Issue Date
2002
Language
English
Article Type
Article; Proceedings Paper
Keywords

SEMICONDUCTORS; FILMS

Citation

FERROELECTRICS, v.273, pp.2449 - 2454

ISSN
0015-0193
URI
http://hdl.handle.net/10203/79826
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