DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ha, DW | ko |
dc.contributor.author | Ranade, P | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Lee, JS | ko |
dc.contributor.author | King, TJ | ko |
dc.contributor.author | Hu, CM | ko |
dc.date.accessioned | 2013-03-03T17:52:14Z | - |
dc.date.available | 2013-03-03T17:52:14Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-04 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.42, no.4B, pp.1979 - 1982 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/79763 | - |
dc.description.abstract | In this paper, we demonstrate threshold voltage (V-T) adjustment for Mo-gated ultra-thin-body (UTB) silicon-on-insulator (SOI) MOSFETs by nitrogen (N-14(+)) implantation for the first time. In order to avoid dopant fluctuation effects and impurity scattering, a lightly doped (10(15) cm(-3)) Si body is used without degrading the short channel effects by virtue of an ultra-thin body. Metallic gate materials are desirable for reducing resistance, and for eliminating the gate depletion effect as well as dopant penetration through an ultra-thin gate dielectric. The VT for Mo-gated UTB SOI p-channel MOSFET is -0.2 V, and it can be shifted by approximately -65 mV for every 1 x 10(15) cm(-2) increment in N-14(+) implant dose. An estimated dose of 6-8 x 10(15) cm(-2) is needed for achieving low V-T (0.2-0.3 V) Mo-gated UTB SOI n-channel MOSFET. | - |
dc.language | English | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.subject | BORON | - |
dc.subject | FILM | - |
dc.subject | CMOS | - |
dc.title | Molybdenum gate work function engineering for ultra-thin-body silicon-on-insulator (UTB SOI) MOSFETs | - |
dc.type | Article | - |
dc.identifier.wosid | 000183283700033 | - |
dc.identifier.scopusid | 2-s2.0-0038348079 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.issue | 4B | - |
dc.citation.beginningpage | 1979 | - |
dc.citation.endingpage | 1982 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.identifier.doi | 10.1143/JJAP.42.1979 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Ha, DW | - |
dc.contributor.nonIdAuthor | Ranade, P | - |
dc.contributor.nonIdAuthor | Lee, JS | - |
dc.contributor.nonIdAuthor | King, TJ | - |
dc.contributor.nonIdAuthor | Hu, CM | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | metal (molybdenum) gate technology | - |
dc.subject.keywordAuthor | work function engineering | - |
dc.subject.keywordAuthor | UTB SOICMOSFET | - |
dc.subject.keywordAuthor | nitrogen implantation | - |
dc.subject.keywordAuthor | threshold voltage adjustment | - |
dc.subject.keywordPlus | BORON | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordPlus | CMOS | - |
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