DC Field | Value | Language |
---|---|---|
dc.contributor.author | Joo, MS | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Balasubramanian, N | ko |
dc.contributor.author | Kwong, DL | ko |
dc.date.accessioned | 2013-03-03T16:00:13Z | - |
dc.date.available | 2013-03-03T16:00:13Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-11 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/79343 | - |
dc.description.abstract | Thermal instability of effective work function and its material dependence on metal/high-kappa gate stacks is investigated. It is found that thermal instability of the effective work function of metal electrode on a gate dielectric is strongly dependent on the gate electrode and dielectric material. Thermal instability of a metal gate is related to the presence of silicon at the interface, and the Fermi-level pinning position is dependent on the location of silicon at the interface. The silicon-metal or metal-silicon bond formation by thermal anneal at the metal/dielectric interface induces the donor-like or acceptor-like interface states, causing a change of effective work function. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | SCHOTTKY-BARRIER | - |
dc.subject | INTERFACE | - |
dc.subject | SILICON | - |
dc.title | Thermal instability of effective work function in metal/high-kappa stack and its material dependence | - |
dc.type | Article | - |
dc.identifier.wosid | 000224712000002 | - |
dc.identifier.scopusid | 2-s2.0-8344235960 | - |
dc.type.rims | ART | - |
dc.citation.volume | 25 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 716 | - |
dc.citation.endingpage | 718 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/led.2004.836763 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Joo, MS | - |
dc.contributor.nonIdAuthor | Balasubramanian, N | - |
dc.contributor.nonIdAuthor | Kwong, DL | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | fermi-level pinning | - |
dc.subject.keywordAuthor | high-kappa | - |
dc.subject.keywordAuthor | metal gate | - |
dc.subject.keywordAuthor | thermal instability | - |
dc.subject.keywordAuthor | work function | - |
dc.subject.keywordPlus | SCHOTTKY-BARRIER | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | SILICON | - |
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