Formation of Ferroelectric Nano-Domains using Scanning Force Microscopy for the Future Application of Memory Devices
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | No, Kwangsoo | - |
| dc.date.accessioned | 2008-11-24T05:11:33Z | - |
| dc.date.available | 2008-11-24T05:11:33Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2000-01-01 | - |
| dc.identifier.citation | International Symposium on Integrated Ferroelectrics, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/7911 | - |
| dc.description.sponsorship | Korean ministry of Science and Technology | en |
| dc.language | ENG | - |
| dc.language.iso | en_US | en |
| dc.title | Formation of Ferroelectric Nano-Domains using Scanning Force Microscopy for the Future Application of Memory Devices | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | International Symposium on Integrated Ferroelectrics | - |
| dc.identifier.conferencecountry | Germany | - |
| dc.identifier.conferencecountry | Germany | - |
| dc.contributor.localauthor | No, Kwangsoo | - |
- Appears in Collection
- MS-Conference Papers(학술회의논문)
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