The effect of thermal annealings of PZT thin films prepared by sol-gel

Abstract

Properties of Pb(Zr0.52Ti0.48)O-3 ferroelectric thin films prepared by rapid thermal annealing(RTA)/direct insertion thermal annealing(DITA) were investigated. The morphologies and ferroelectric properties are affected strongly by thermal treatment. The remnant polarization(Pr), and coercive force(Ec) of typical sample are about 13.7 mu C/cm(2) and 55.6 kV/cm, respectively. The dielectric constant and loss tangent are 786 and 2.4 % at 100 Hz respectively. The PZT film prepared by RTA and dried at 350 degreesC possesses desirable ferroelectric and insulation properties, which is applicable to FRAM or piezoelectric MEMS.