DC Field | Value | Language |
---|---|---|
dc.contributor.author | gwon-sam kang | ko |
dc.contributor.author | ho-jeong | ko |
dc.contributor.author | chi-kyu choi | ko |
dc.contributor.author | Chang, Choong-Seock | ko |
dc.date.accessioned | 2013-03-03T14:02:53Z | - |
dc.date.available | 2013-03-03T14:02:53Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, no.5, pp.676 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/78992 | - |
dc.description.abstract | Fluorinated amorphous carbon thin films were deposited on p-type Si(100) substrates by using an inductively coupled plasma chemical vapor deposition (ICPCVD) system with a mixture of carbon tetrafluoride (CF4) and methane (CH4) gases. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy spectra showed that the film had C-F, C-F-2,GF(3), C=CF2, and CF=CF2 bonds. The C-CF bonds induced a re-arrangement of the chemical bonds with C-F and C-F-2 as the fluorine content was increased. The C-F and C-F-2 bonds of the annealed sample decreased at 400 degreesC. The dielectric constant of the a-C:F film depends on the concentrations of the C-F-2 and the C-F-3 bonds. In the sample annealed at 400 degreesC, the relative contents of the C-F-2 and the C-F-3 bonds decreased, and the relative contents of the C-CF bond increased. The lowest relative dielectric constant of as-deposited films with a CF4/(CH4 +CF4) flow rate ratio of 75 % was about 2.6, but the dielectric constant of the sample annealed at 400 degreesC was about 3.5. Therefore, a reduction of the dielectric constant can be obtained by varying the C-F,.,, bonding configuration, as well as by incorporating fluorine atoms. | - |
dc.language | English | - |
dc.publisher | Korean Physical Soc | - |
dc.subject | FLUORINATED AMORPHOUS-CARBON | - |
dc.subject | VAPOR-DEPOSITION | - |
dc.subject | THIN-FILMS | - |
dc.subject | INTERLAYER DIELECTRICS | - |
dc.subject | FLUOROCARBON FILMS | - |
dc.subject | PLASMA | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | STABILITY | - |
dc.title | Chemical bond structure of a-C:F films with a low dielectric constant deposited from CH4/CF4 | - |
dc.type | Article | - |
dc.identifier.wosid | 000183026600017 | - |
dc.identifier.scopusid | 2-s2.0-0038407594 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 676 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | Chang, Choong-Seock | - |
dc.contributor.nonIdAuthor | gwon-sam kang | - |
dc.contributor.nonIdAuthor | ho-jeong | - |
dc.contributor.nonIdAuthor | chi-kyu choi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | dielectric constant | - |
dc.subject.keywordAuthor | low-k materials | - |
dc.subject.keywordAuthor | a-C : F films | - |
dc.subject.keywordAuthor | bonding structure | - |
dc.subject.keywordAuthor | ICPCVD | - |
dc.subject.keywordPlus | FLUORINATED AMORPHOUS-CARBON | - |
dc.subject.keywordPlus | VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | INTERLAYER DIELECTRICS | - |
dc.subject.keywordPlus | FLUOROCARBON FILMS | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | STABILITY | - |
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