Chemical bond structure of a-C:F films with a low dielectric constant deposited from CH4/CF4

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dc.contributor.authorgwon-sam kangko
dc.contributor.authorho-jeongko
dc.contributor.authorchi-kyu choiko
dc.contributor.authorChang, Choong-Seockko
dc.date.accessioned2013-03-03T14:02:53Z-
dc.date.available2013-03-03T14:02:53Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, no.5, pp.676-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/78992-
dc.description.abstractFluorinated amorphous carbon thin films were deposited on p-type Si(100) substrates by using an inductively coupled plasma chemical vapor deposition (ICPCVD) system with a mixture of carbon tetrafluoride (CF4) and methane (CH4) gases. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy spectra showed that the film had C-F, C-F-2,GF(3), C=CF2, and CF=CF2 bonds. The C-CF bonds induced a re-arrangement of the chemical bonds with C-F and C-F-2 as the fluorine content was increased. The C-F and C-F-2 bonds of the annealed sample decreased at 400 degreesC. The dielectric constant of the a-C:F film depends on the concentrations of the C-F-2 and the C-F-3 bonds. In the sample annealed at 400 degreesC, the relative contents of the C-F-2 and the C-F-3 bonds decreased, and the relative contents of the C-CF bond increased. The lowest relative dielectric constant of as-deposited films with a CF4/(CH4 +CF4) flow rate ratio of 75 % was about 2.6, but the dielectric constant of the sample annealed at 400 degreesC was about 3.5. Therefore, a reduction of the dielectric constant can be obtained by varying the C-F,.,, bonding configuration, as well as by incorporating fluorine atoms.-
dc.languageEnglish-
dc.publisherKorean Physical Soc-
dc.subjectFLUORINATED AMORPHOUS-CARBON-
dc.subjectVAPOR-DEPOSITION-
dc.subjectTHIN-FILMS-
dc.subjectINTERLAYER DIELECTRICS-
dc.subjectFLUOROCARBON FILMS-
dc.subjectPLASMA-
dc.subjectSPECTROSCOPY-
dc.subjectSTABILITY-
dc.titleChemical bond structure of a-C:F films with a low dielectric constant deposited from CH4/CF4-
dc.typeArticle-
dc.identifier.wosid000183026600017-
dc.identifier.scopusid2-s2.0-0038407594-
dc.type.rimsART-
dc.citation.volume42-
dc.citation.issue5-
dc.citation.beginningpage676-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorChang, Choong-Seock-
dc.contributor.nonIdAuthorgwon-sam kang-
dc.contributor.nonIdAuthorho-jeong-
dc.contributor.nonIdAuthorchi-kyu choi-
dc.type.journalArticleArticle-
dc.subject.keywordAuthordielectric constant-
dc.subject.keywordAuthorlow-k materials-
dc.subject.keywordAuthora-C : F films-
dc.subject.keywordAuthorbonding structure-
dc.subject.keywordAuthorICPCVD-
dc.subject.keywordPlusFLUORINATED AMORPHOUS-CARBON-
dc.subject.keywordPlusVAPOR-DEPOSITION-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusINTERLAYER DIELECTRICS-
dc.subject.keywordPlusFLUOROCARBON FILMS-
dc.subject.keywordPlusPLASMA-
dc.subject.keywordPlusSPECTROSCOPY-
dc.subject.keywordPlusSTABILITY-
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