DC Field | Value | Language |
---|---|---|
dc.contributor.author | Paik, H | ko |
dc.contributor.author | Kim, Y | ko |
dc.contributor.author | No, Kwangsoo | ko |
dc.contributor.author | Cann, DP | ko |
dc.contributor.author | Yoon, D | ko |
dc.contributor.author | Kim, B | ko |
dc.date.accessioned | 2008-11-19T05:40:32Z | - |
dc.date.available | 2008-11-19T05:40:32Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-07 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.204, pp.2339 - 2346 | - |
dc.identifier.issn | 0031-8965 | - |
dc.identifier.uri | http://hdl.handle.net/10203/7875 | - |
dc.description.abstract | We investigate the effect of annealing temperature on the preferentially (110)-oriented CaRuO3-delta, (CRO) thin films directly prepared on Si(100) substrate by rf magnetron sputtering. Crystalline quality and electrical transport properties of the CRO thin films were modified by post-annealing treatment. It was obvious that 700 degrees C post-annealing brought about excellent metallic characteristics with the elevation of carrier concentration and mobility. From this result, we suggested that enhanced (110) orientation, and the ratio of chemical composition Ru4+/Ca2+ ion were responsible for the transport properties of CRO thin film. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | - |
dc.description.sponsorship | ‘Brain Korea 21’ project. We appreciate the measurement of transport property using a He cryostat (Korea Basic Science Institute), and also thanks to Mr. Yunseok Kim for measuring of atomic force microscopy (KAIST). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | GROWTH | - |
dc.subject | SRRUO3 | - |
dc.subject | TRANSITION | - |
dc.subject | ITINERANT | - |
dc.subject | INSULATOR | - |
dc.subject | SI(100) | - |
dc.subject | METAL | - |
dc.subject | SR | - |
dc.title | Effect of annealing temperature on the electrical transport properties of CaRuO3-delta thin films directly deposited on the Si substrate | - |
dc.type | Article | - |
dc.identifier.wosid | 000248264100022 | - |
dc.identifier.scopusid | 2-s2.0-34547494199 | - |
dc.type.rims | ART | - |
dc.citation.volume | 204 | - |
dc.citation.beginningpage | 2339 | - |
dc.citation.endingpage | 2346 | - |
dc.citation.publicationname | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.identifier.doi | 10.1002/pssa.200622605 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | No, Kwangsoo | - |
dc.contributor.nonIdAuthor | Paik, H | - |
dc.contributor.nonIdAuthor | Kim, Y | - |
dc.contributor.nonIdAuthor | Cann, DP | - |
dc.contributor.nonIdAuthor | Yoon, D | - |
dc.contributor.nonIdAuthor | Kim, B | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SRRUO3 | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | ITINERANT | - |
dc.subject.keywordPlus | INSULATOR | - |
dc.subject.keywordPlus | SI(100) | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | SR | - |
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