DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hu, H | ko |
dc.contributor.author | Zhu, CX | ko |
dc.contributor.author | Lu, YF | ko |
dc.contributor.author | Li, MF | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Choi, WK | ko |
dc.date.accessioned | 2013-03-03T12:49:24Z | - |
dc.date.available | 2013-03-03T12:49:24Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-09 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.23, no.9, pp.514 - 516 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/78737 | - |
dc.description.abstract | Metal-insulator-metal (MIM) capacitors with a 56-nm-thick HfO(2) high-kappa dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (similar to200 degreesC). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO(2) MIM capacitor can provide a higher capacitance density than Si(3)N(4) MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2 x 10(-9) A/cm(2) at 3 V is achieved. All of these make the HfO(2) MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | INSULATOR-METAL CAPACITORS | - |
dc.subject | FILMS | - |
dc.title | A high performance MIM capacitor using HfO(2) dielectrics | - |
dc.type | Article | - |
dc.identifier.wosid | 000177748500004 | - |
dc.identifier.scopusid | 2-s2.0-0036714971 | - |
dc.type.rims | ART | - |
dc.citation.volume | 23 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 514 | - |
dc.citation.endingpage | 516 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2002.802602 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Hu, H | - |
dc.contributor.nonIdAuthor | Zhu, CX | - |
dc.contributor.nonIdAuthor | Lu, YF | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.contributor.nonIdAuthor | Choi, WK | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | high-kappa | - |
dc.subject.keywordAuthor | MIM capacitor | - |
dc.subject.keywordAuthor | temperature coefficient | - |
dc.subject.keywordAuthor | thin-film devices | - |
dc.subject.keywordAuthor | voltage linearity | - |
dc.subject.keywordPlus | INSULATOR-METAL CAPACITORS | - |
dc.subject.keywordPlus | FILMS | - |
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