Metallorganic chemical vapor deposition of metallic Ru thin films on biaxially textured Ni substrates using a Ru(EtCp)(2) precursor

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dc.contributor.authorTian, HYko
dc.contributor.authorChan, HLWko
dc.contributor.authorChoy, CLko
dc.contributor.authorChoi, JWko
dc.contributor.authorNo, Kwangsooko
dc.date.accessioned2008-11-19T02:53:47Z-
dc.date.available2008-11-19T02:53:47Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-09-
dc.identifier.citationMATERIALS CHEMISTRY AND PHYSICS, v.93, pp.142 - 148-
dc.identifier.issn0254-0584-
dc.identifier.urihttp://hdl.handle.net/10203/7868-
dc.description.abstractRuthenium (Ru) films on rolling-assisted biaxially textured Ni substrates (RABiTs) were deposited by liquid source chemical vapor deposition using bis-(ethyl-pi-cyclopentadienyl)ruthenium (Ru(C2H5C5H4)(2)). The thermal decomposition process of the precursor was investigated by Fourier transform infrared spectroscopy (FTIR), mass spectroscopy, and differential scanning calorimetry/thermogravimetric analyses (DSC/TGA). The crystalline structure and resistivity of Ru thin films were investigated. The Ru films were polycrystalline and had a grainy structure. Although the thermal decomposition of the precursor required a sufficient amount of oxygen, the experimental results showed that up to a certain concentration of oxygen (i.e. O-2/Ar similar to 30/10), Ru metal film was deposited without any detectable RuO2 impurities. A higher deposition temperature and a higher ratio of O-2/Ar will be beneficial to the growth of (0 0 2) orientation. They showed a low resistivity of about 10-20 mu Omega.cm, which is sufficiently low for them to be used as a buffer layer in superconductor tapes or electrode materials in dielectric capacitors. (c) 2005 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipBK21 project in the Korea Advanced Institute of Science and Technology(KAIST), South Korea, and by the postdoctoral fellowship program of The Hong Kong Polytechnic University.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELSEVIER SCIENCE SA-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectRUTHENIUM DIOXIDE-
dc.subjectELECTRODES-
dc.subjectTAPES-
dc.subjectOXIDE-
dc.titleMetallorganic chemical vapor deposition of metallic Ru thin films on biaxially textured Ni substrates using a Ru(EtCp)(2) precursor-
dc.typeArticle-
dc.identifier.wosid000230375200025-
dc.identifier.scopusid2-s2.0-20444506088-
dc.type.rimsART-
dc.citation.volume93-
dc.citation.beginningpage142-
dc.citation.endingpage148-
dc.citation.publicationnameMATERIALS CHEMISTRY AND PHYSICS-
dc.identifier.doi10.1016/j.matchemphys.2005.03.002-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorNo, Kwangsoo-
dc.contributor.nonIdAuthorTian, HY-
dc.contributor.nonIdAuthorChan, HLW-
dc.contributor.nonIdAuthorChoy, CL-
dc.contributor.nonIdAuthorChoi, JW-
dc.type.journalArticleArticle-
dc.subject.keywordAuthormetal films-
dc.subject.keywordAuthorchemical vapor deposition-
dc.subject.keywordAuthorauger spectrum-
dc.subject.keywordAuthorresistivity-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusRUTHENIUM DIOXIDE-
dc.subject.keywordPlusELECTRODES-
dc.subject.keywordPlusTAPES-
dc.subject.keywordPlusOXIDE-
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