DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tian, HY | ko |
dc.contributor.author | Chan, HLW | ko |
dc.contributor.author | Choy, CL | ko |
dc.contributor.author | Choi, JW | ko |
dc.contributor.author | No, Kwangsoo | ko |
dc.date.accessioned | 2008-11-19T02:53:47Z | - |
dc.date.available | 2008-11-19T02:53:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-09 | - |
dc.identifier.citation | MATERIALS CHEMISTRY AND PHYSICS, v.93, pp.142 - 148 | - |
dc.identifier.issn | 0254-0584 | - |
dc.identifier.uri | http://hdl.handle.net/10203/7868 | - |
dc.description.abstract | Ruthenium (Ru) films on rolling-assisted biaxially textured Ni substrates (RABiTs) were deposited by liquid source chemical vapor deposition using bis-(ethyl-pi-cyclopentadienyl)ruthenium (Ru(C2H5C5H4)(2)). The thermal decomposition process of the precursor was investigated by Fourier transform infrared spectroscopy (FTIR), mass spectroscopy, and differential scanning calorimetry/thermogravimetric analyses (DSC/TGA). The crystalline structure and resistivity of Ru thin films were investigated. The Ru films were polycrystalline and had a grainy structure. Although the thermal decomposition of the precursor required a sufficient amount of oxygen, the experimental results showed that up to a certain concentration of oxygen (i.e. O-2/Ar similar to 30/10), Ru metal film was deposited without any detectable RuO2 impurities. A higher deposition temperature and a higher ratio of O-2/Ar will be beneficial to the growth of (0 0 2) orientation. They showed a low resistivity of about 10-20 mu Omega.cm, which is sufficiently low for them to be used as a buffer layer in superconductor tapes or electrode materials in dielectric capacitors. (c) 2005 Elsevier B.V. All rights reserved. | - |
dc.description.sponsorship | BK21 project in the Korea Advanced Institute of Science and Technology(KAIST), South Korea, and by the postdoctoral fellowship program of The Hong Kong Polytechnic University. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | RUTHENIUM DIOXIDE | - |
dc.subject | ELECTRODES | - |
dc.subject | TAPES | - |
dc.subject | OXIDE | - |
dc.title | Metallorganic chemical vapor deposition of metallic Ru thin films on biaxially textured Ni substrates using a Ru(EtCp)(2) precursor | - |
dc.type | Article | - |
dc.identifier.wosid | 000230375200025 | - |
dc.identifier.scopusid | 2-s2.0-20444506088 | - |
dc.type.rims | ART | - |
dc.citation.volume | 93 | - |
dc.citation.beginningpage | 142 | - |
dc.citation.endingpage | 148 | - |
dc.citation.publicationname | MATERIALS CHEMISTRY AND PHYSICS | - |
dc.identifier.doi | 10.1016/j.matchemphys.2005.03.002 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | No, Kwangsoo | - |
dc.contributor.nonIdAuthor | Tian, HY | - |
dc.contributor.nonIdAuthor | Chan, HLW | - |
dc.contributor.nonIdAuthor | Choy, CL | - |
dc.contributor.nonIdAuthor | Choi, JW | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | metal films | - |
dc.subject.keywordAuthor | chemical vapor deposition | - |
dc.subject.keywordAuthor | auger spectrum | - |
dc.subject.keywordAuthor | resistivity | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | RUTHENIUM DIOXIDE | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | TAPES | - |
dc.subject.keywordPlus | OXIDE | - |
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