DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ha, JK | ko |
dc.contributor.author | Chung, BH | ko |
dc.contributor.author | Han, SY | ko |
dc.contributor.author | Choi, JO | ko |
dc.contributor.author | Kim, HG | ko |
dc.date.accessioned | 2013-03-03T12:20:31Z | - |
dc.date.available | 2013-03-03T12:20:31Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-01 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.19, no.3, pp.929 - 932 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/78653 | - |
dc.description.abstract | A novel resistive layer structure was proposed for a Mo-tip field emitter array, where the electrons travel along a resistive path running from a cathode electrode to a tip through nearest neighboring via holes of an insulating interdielectric film. To study the field emission characteristics of the new structure, Mo-tip arrays with a gate hole size of 1.2 mum were fabricated using a PH3 doped amorphous Si (a-Si:H) film as the resistive layer and a silicon oxide (SiOx) interdielectric film with 1.2-mum-diam via holes. Before the measurements of current-voltage characteristics, the arrays were annealed in an Ar environment, which is used for the vacuum packaging of a display panel. The arrays showed a strong dependence of an emission current on the resistive layer thickness, i.e., an average current density of 10 nA/tip at a gate voltage of 108, 93, and 82 V for a-Si:H film with a thickness of 0.36, 0.6, and 1.2 mum, respectively. The new structure exhibited a smaller voltage drop than that of a conventional mesh structure, with the gate voltage of the former being decreased by 35 V at a current density of 10 nA/tip. It was also found that the new structure was robust enough to sustain above 70 nA/tip, which is more than enough to be used for a wide variety of field emission display applications. The dependence of the resistivity of the a-Si:H on a sealing process was also discussed. (C) 2001 American Vacuum Society. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Novel resistive layer structure using via holes of an insulating interdielectric as a current path | - |
dc.type | Article | - |
dc.identifier.wosid | 000169366600060 | - |
dc.identifier.scopusid | 2-s2.0-0035326451 | - |
dc.type.rims | ART | - |
dc.citation.volume | 19 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 929 | - |
dc.citation.endingpage | 932 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE TECHNOLOGY B | - |
dc.identifier.doi | 10.1116/1.1372920 | - |
dc.contributor.localauthor | Kim, HG | - |
dc.contributor.nonIdAuthor | Ha, JK | - |
dc.contributor.nonIdAuthor | Chung, BH | - |
dc.contributor.nonIdAuthor | Han, SY | - |
dc.contributor.nonIdAuthor | Choi, JO | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | FIELD | - |
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