DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, EC | ko |
dc.contributor.author | Kim, YS | ko |
dc.contributor.author | Jin, YG | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-03T10:54:59Z | - |
dc.date.available | 2013-03-03T10:54:59Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-12 | - |
dc.identifier.citation | PHYSICA B-CONDENSED MATTER, v.308, pp.912 - 915 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | http://hdl.handle.net/10203/78410 | - |
dc.description.abstract | Based on first-principles electronic structure calculations for N-related and native point defects in Zinc Oxide (ZnO), we propose a mechanism for the compensation of N acceptors. As compared to a normal N-2 source, the use of an active plasma N-2 gas generally increases the N solubility limit, because the N chemical potential is enhanced. However., whenever a pure N source is used, N acceptors are greatly compensated by donor defects, which may explain the difficulty in achieving low-resistance p-type ZnO. Major compensating donors for N acceptors are found to be different at low and high N doping levels, and also depend on the type of N-2 gas source. (C) 2001 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | THIN-FILMS | - |
dc.subject | DEFECTS | - |
dc.subject | GROWTH | - |
dc.subject | ZNSE | - |
dc.title | First-principles study of the compensation mechanism in N-doped ZnO | - |
dc.type | Article | - |
dc.identifier.wosid | 000173660100230 | - |
dc.identifier.scopusid | 2-s2.0-0035669171 | - |
dc.type.rims | ART | - |
dc.citation.volume | 308 | - |
dc.citation.beginningpage | 912 | - |
dc.citation.endingpage | 915 | - |
dc.citation.publicationname | PHYSICA B-CONDENSED MATTER | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Lee, EC | - |
dc.contributor.nonIdAuthor | Kim, YS | - |
dc.contributor.nonIdAuthor | Jin, YG | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | nitrogen | - |
dc.subject.keywordAuthor | compensation | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ACCEPTORS | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ZNSE | - |
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