DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Choo, DC | ko |
dc.contributor.author | Shim, JH | ko |
dc.contributor.author | Jung, M | ko |
dc.contributor.author | Kang, SO | ko |
dc.contributor.author | Lee, HS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.date.accessioned | 2013-03-03T10:11:05Z | - |
dc.date.available | 2013-03-03T10:11:05Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-07 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.79, no.1, pp.120 - 122 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/78327 | - |
dc.description.abstract | A Ga+ focused ion-beam (FIB) technique utilizing both lithographic and nanoparticle formation processes has been introduced to create nanocrystals acting as Coulomb islands at room temperature. High-resolution transmission electron microscopy results show that the nanocrystals acting as Coulomb islands are created in the source-drain active layer by using a Ga+ FIB. The results for the drain current and the conductance as functions of the drain voltage with an open gate voltage at room temperature show a Coulomb staircase and conductance oscillations, respectively. Nanoscale particles of Al with an amorphous phase are created in the source-drain channel by the defects due to the radiation effect of the Ga+ FIB, and collisions between Ga+ ions and Al atoms produce secondary electrons, that interact with the nanoparticles, which are acting as Coulomb islands, to form the crystal phase. (C) 2001 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SINGLE-ELECTRON TRANSISTORS | - |
dc.subject | QUANTUM-DOT TRANSISTORS | - |
dc.subject | SILICON | - |
dc.subject | BLOCKADE | - |
dc.subject | STATES | - |
dc.subject | MEMORY | - |
dc.subject | GATE | - |
dc.subject | NANOPARTICLES | - |
dc.subject | MICROSCOPY | - |
dc.subject | SUBSTRATE | - |
dc.title | Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process | - |
dc.type | Article | - |
dc.identifier.wosid | 000169658800041 | - |
dc.identifier.scopusid | 2-s2.0-0035796662 | - |
dc.type.rims | ART | - |
dc.citation.volume | 79 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 120 | - |
dc.citation.endingpage | 122 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1378052 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Choo, DC | - |
dc.contributor.nonIdAuthor | Shim, JH | - |
dc.contributor.nonIdAuthor | Jung, M | - |
dc.contributor.nonIdAuthor | Kang, SO | - |
dc.contributor.nonIdAuthor | Lee, HS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SINGLE-ELECTRON TRANSISTORS | - |
dc.subject.keywordPlus | QUANTUM-DOT TRANSISTORS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | BLOCKADE | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | MICROSCOPY | - |
dc.subject.keywordPlus | SUBSTRATE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.