DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, SS | ko |
dc.contributor.author | Kang, YM | ko |
dc.contributor.author | Lee, J | ko |
dc.contributor.author | Lee, DH | ko |
dc.contributor.author | Kim, Ho Gi | ko |
dc.date.accessioned | 2013-03-03T09:47:57Z | - |
dc.date.available | 2013-03-03T09:47:57Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-12 | - |
dc.identifier.citation | JOURNAL DE PHYSIQUE IV, v.8, no.p9, pp.269 | - |
dc.identifier.issn | 1155-4339 | - |
dc.identifier.uri | http://hdl.handle.net/10203/78262 | - |
dc.description.abstract | La-modified lead titanate. (Pb, La)TiO3. [PLT], thin films were deposited by low pressure metal organic chemical vapor deposition (MOCVD) on Pt/SiO2/Si substrates. The composition of the films was studied with various deposition conditions. Also, the electrical properties. such as the dielectric constant, the P-E hysteresis curve, and the leakage current density, were investigated with various annealing conditions. The experimental results show that the 180nm-thick PLT films with the La mole % of 12 are applicable as the planar capacitor layer of 1 gigabit DRAM. | - |
dc.language | English | - |
dc.publisher | E D P SCIENCES | - |
dc.title | Process and characterization of (Pb, La)TiO3 thin films deposited by MOCVD for gigabit DRAM application | - |
dc.type | Article | - |
dc.identifier.wosid | 000078118100054 | - |
dc.identifier.scopusid | 2-s2.0-11744325592 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | p9 | - |
dc.citation.beginningpage | 269 | - |
dc.citation.publicationname | JOURNAL DE PHYSIQUE IV | - |
dc.identifier.doi | 10.1051/jp4:1998953 | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.nonIdAuthor | Lee, SS | - |
dc.contributor.nonIdAuthor | Kang, YM | - |
dc.contributor.nonIdAuthor | Lee, J | - |
dc.contributor.nonIdAuthor | Lee, DH | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
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