Effects of the partial pressure of copper (I) hexafluoroacetylacetonate trimethylvinylsilane on the chemical vapor deposition of copper

Abstract

The effects of the partial pressure of precursor on the metalorganic chemical vapor deposition of copper were investigated. Copper was deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane as a metalorganic precursor on TiN/Ti/Si substrates in a low-pressure warm-wall chemical vapor deposition reactor. The deposition rate of copper film was a constant Value at a partial pressure higher than 0.048 Torr and decreased to below the constant value at a partial pressure lower than 0.048 Torr. The incubation time for copper nucleation decreased with increasing partial pressure of the precursor. The resistivity of copper film decreased to 2.00 mu Omega.cm with increasing partial pressure of the precursor. At a partial pressure lower than 0.048 Torr, copper did not nucleate inside the trench so that the step coverage of copper him became very poor.