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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

The strain relaxation in a lattice-mismatched heterostructure

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dc.contributor.authorLim, YSko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorKim, TWko
dc.date.accessioned2013-03-03T08:16:51Z-
dc.date.available2013-03-03T08:16:51Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-04-
dc.identifier.citationJOURNAL OF CRYSTAL GROWTH, v.200, no.3-4, pp.421 - 426-
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/10203/77924-
dc.description.abstractStrain relaxation phenomena of the heteroepitaxial lattice-mismatched semiconductors have been investigated. The relationship between the residual in-plane strain and the width of the misfit cell was obtained geometrically. The residual in-plane strain was calculated for various film thicknesses by using the energy minimization theory on the misfit cell in the InxGa1-xAs/GaAs(1 0 0) heterostructure system. A generalized strain relaxation model is presented on the basis of the energy minimization theory. (C) 1999 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectMISFIT DISLOCATIONS-
dc.subjectLAYER HETEROSTRUCTURES-
dc.subjectSEMICONDUCTORS-
dc.subjectTHICKNESS-
dc.subjectSTRESSES-
dc.subjectGAAS-
dc.titleThe strain relaxation in a lattice-mismatched heterostructure-
dc.typeArticle-
dc.identifier.wosid000079859800012-
dc.identifier.scopusid2-s2.0-0032642199-
dc.type.rimsART-
dc.citation.volume200-
dc.citation.issue3-4-
dc.citation.beginningpage421-
dc.citation.endingpage426-
dc.citation.publicationnameJOURNAL OF CRYSTAL GROWTH-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorLim, YS-
dc.contributor.nonIdAuthorKim, TW-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorstrain relaxation-
dc.subject.keywordAuthormisfit cell-
dc.subject.keywordAuthorInGaAs-
dc.subject.keywordAuthorrelaxation thickness-
dc.subject.keywordAuthorheterostructure-
dc.subject.keywordPlusMISFIT DISLOCATIONS-
dc.subject.keywordPlusLAYER HETEROSTRUCTURES-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusTHICKNESS-
dc.subject.keywordPlusSTRESSES-
dc.subject.keywordPlusGAAS-
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MS-Journal Papers(저널논문)
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