DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, DS | ko |
dc.contributor.author | Park, ST | ko |
dc.contributor.author | Choi, HS | ko |
dc.contributor.author | Choi, IH | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.date.accessioned | 2013-03-03T08:14:00Z | - |
dc.date.available | 2013-03-03T08:14:00Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-10 | - |
dc.identifier.citation | THIN SOLID FILMS, v.354, no.1-2, pp.251 - 255 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77917 | - |
dc.description.abstract | Pt/SrTiO3/Pb(Zr-0.52, Ti-0.48)O-3/SrTiO3/Si (MIFIS) ferroelectric gate oxide structures were prepared by an r.f, sputtering method for application of non-destructive read out ferroelectric RAM (NDRO-FRAM) devices. In the MIFIS structure, a SrTiO3 (STO) film was used as a buffer layer to prevent the interaction between the Pb(Zr-0.52, Ti-0.48)O-3 (PZT) film and the Si substrate and also between the PZT film and the Pt top electrode. In the PZT/Si structure, a serious inter-diffusion of Pb into Si substrate was observed by Auger electron spectrometry (AES). However, STO/PZT/STO/Si structures had a perfect perovskite phase and a flat interface of PZT/STO/Si without the inter-diffusion of Pb into the Si substrate. When Pt/STO/PZT/STO/Si structures were post-annealed at 400 degrees C for 30 min after depositing the Pt top electrodes, the leakage current of MIFIS structure was improved to about 10(-8) A/cm(2). The property of the memory window of MIFIS structures was improved due to a low leakage current. When Pt/STO(25 nm)/PZT(160 nm)/STO(25 nm)/Si structures were annealed at 600 degrees C for 1 h and post-annealed at 400 degrees C for 30 min, the maximum value of the memory window was about 2 V at the applied voltage of 7 V. The memory window was increased as increasing the thickness of PZT film since a higher voltage was applied to the thicker PZT film. (C) 1999 Elsevier Science S.A. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | FIELD-EFFECT TRANSISTOR | - |
dc.title | Characteristics of Pt/SrTiO3/Pb(Zr-0.52, Ti-0.48)O-3/SrTiO3/Si ferroelectric gate oxide structure | - |
dc.type | Article | - |
dc.identifier.wosid | 000083571500041 | - |
dc.identifier.scopusid | 2-s2.0-0343168102 | - |
dc.type.rims | ART | - |
dc.citation.volume | 354 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 251 | - |
dc.citation.endingpage | 255 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Shin, DS | - |
dc.contributor.nonIdAuthor | Park, ST | - |
dc.contributor.nonIdAuthor | Choi, HS | - |
dc.contributor.nonIdAuthor | Choi, IH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | ferroelectric gate oxide | - |
dc.subject.keywordAuthor | MIFIS structure | - |
dc.subject.keywordAuthor | memory window | - |
dc.subject.keywordAuthor | non-destructive read out ferroelectric RAM | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTOR | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.