DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, HS | ko |
dc.contributor.author | Shim, KH | ko |
dc.contributor.author | Lee, SY | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Kang, JY | ko |
dc.date.accessioned | 2013-03-03T08:09:04Z | - |
dc.date.available | 2013-03-03T08:09:04Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-05 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.212, no.3-4, pp.423 - 428 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77904 | - |
dc.description.abstract | Two-step growth in reduced pressure chemical vapor deposition has been successfully developed to achieve in situ phosphorus-doped silicon epitaxial layers, and the characteristic evolution of their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two-step growth, which employs crystallization of amorphous silicon (alpha-Si) layer grown at low temperature, offers crucial advantages in manipulating crystal structures of in situ phosphorus-doped silicon. Our experimental results suggest that an epitaxial or polycrystalline film is readily obtained by initiating growth either without or with annealing to crystallize the ct-Si layers. Kinetic processes for crystallization were accompanied by stimulated dispersion of native oxides in alpha-Si buffers. We also observed that a high phosphorus doping level plays an important role in promoting the dispersion of native oxides, and that the shape of doping profiles depends upon the evolution of crystal structures with V-shaped defects. Thus, the phosphorus doping concentration remains uniform in high-quality single-crystalline Si films obtained by the two-step growth. (C) 2000 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | INTERFACIAL OXIDE | - |
dc.subject | LOW-PRESSURE | - |
dc.subject | SILICON | - |
dc.title | High-quality epitaxial growth of in situ phosphorus-doped Si films by promoting dispersion of native oxides in alpha-Si | - |
dc.type | Article | - |
dc.identifier.wosid | 000086819200009 | - |
dc.identifier.scopusid | 2-s2.0-0034188383 | - |
dc.type.rims | ART | - |
dc.citation.volume | 212 | - |
dc.citation.issue | 3-4 | - |
dc.citation.beginningpage | 423 | - |
dc.citation.endingpage | 428 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kim, HS | - |
dc.contributor.nonIdAuthor | Shim, KH | - |
dc.contributor.nonIdAuthor | Lee, SY | - |
dc.contributor.nonIdAuthor | Kang, JY | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Si | - |
dc.subject.keywordAuthor | APCVD | - |
dc.subject.keywordAuthor | epitaxy | - |
dc.subject.keywordAuthor | phosphorus | - |
dc.subject.keywordAuthor | in situ doping | - |
dc.subject.keywordAuthor | two-step growth | - |
dc.subject.keywordPlus | INTERFACIAL OXIDE | - |
dc.subject.keywordPlus | LOW-PRESSURE | - |
dc.subject.keywordPlus | SILICON | - |
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