DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Lee, DU | ko |
dc.contributor.author | Lim, YS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Park, HL | ko |
dc.date.accessioned | 2013-03-03T07:41:25Z | - |
dc.date.available | 2013-03-03T07:41:25Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-04 | - |
dc.identifier.citation | SOLID STATE COMMUNICATIONS, v.106, no.3, pp.153 - 156 | - |
dc.identifier.issn | 0038-1098 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77813 | - |
dc.description.abstract | Transmission electron microscopy (TEM) measurements were performed to investigate the role and mechanism of a ZnTe buffer layer on the high-quality structural properties for strained CdxZn1-xTe/ZnTe double quantum wells. The bright-field TEM image near the ZnTe/GaAs interface showed the Moire patterns, indicative of initial island growth and of a difference in the growth directions between the islands. The high-resolution TEM image indicated that the difference in the growth directions originated from the formation of the plane defects, such as a sub-grain boundary. When a 1-mu m ZnTe buffer layer was grown on the GaAs substrate, the ZnTe buffer layer could be used as a defect-free substrate, as shown by the thickness fringes observed from the TEM image. The formation mechanism for the thickness fringes in the ZnTe buffer layer between the CdxZn1-xTe/ZnTe double quantum well and the GaAs substrate is discussed. The results indicate that the ZnTe buffer layer plays an important role for strained CdxZn1-xTe/ZnTe double quantum wells grown on GaAs substrates by eliminating the defects due to the lattice mismatch. (C) 1998 Elsevier Science Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | VAPOR-TRANSPORT DEPOSITION | - |
dc.subject | MICROSTRUCTURE | - |
dc.subject | FILMS | - |
dc.title | The role and mechanism of a ZnTe buffer layer on the structural properties of the strained CdxZn1-xTe/ZnTe double quantum wells | - |
dc.type | Article | - |
dc.identifier.wosid | 000072746200008 | - |
dc.identifier.scopusid | 2-s2.0-0032041154 | - |
dc.type.rims | ART | - |
dc.citation.volume | 106 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 153 | - |
dc.citation.endingpage | 156 | - |
dc.citation.publicationname | SOLID STATE COMMUNICATIONS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Lee, DU | - |
dc.contributor.nonIdAuthor | Lim, YS | - |
dc.contributor.nonIdAuthor | Park, HL | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | VAPOR-TRANSPORT DEPOSITION | - |
dc.subject.keywordPlus | MICROSTRUCTURE | - |
dc.subject.keywordPlus | FILMS | - |
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