Numerical study on the effect of operating parameters on point defects in a silicon crystal during Czochralski growth II. Magnetic effect

Abstract

This study aimed to find the relationship between the strength of the magnetic field and the density of point defects in a silicon crystal in a cusp-shaped magnetic Czochralski process. Vacancy and self-interstitial point defects were adopted as point defects. The strength of the field was changed from 0.15 to 0.3 T while the crucible and crystal rotational rates were fixed to 8 and - 18 rpm, respectively. It was found that the strength of the field significantly affected the melt motion in the crucible, resulting in large change in the density of the point defects of the crystal. (C) 2000 Elsevier Science B.V. All rights reserved.