Etching behavior and damage recovery of SrBi2Ta2O9 thin films

Abstract

The etching and ferroelectric properties of SrBi2Ta2O9 (SBT) thin films prepared by metal organic decomposition (MOD) were investigated. It was observed that the etching rates of SBT thin films varied with the etch parameters. The etching rate of SET in gases with Ar added is higher, which indicates that the physical bombardment could be more efficient in SET etching. We also investigated the influence of etching damage in SET films during the reactive ion etching (RIE) process on the electrical properties of ferroelectric materials.