Optical evidence of amorphous-network change in the initial-growth stage a-Si : H

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We investigated the optical characteristics of thin (<22 nm) hydrogenated amorphous silicon (a-Si:H) films by spectroscopic ellipsometry (SE). For comparison, we prepared H-2 diluted as well as undiluted a-Si:H samples on c-Si substrates. As the thickness decreases, the peak positions of dielectric functions (epsilon(r), epsilon(i)) Shifted to the higher-energy sides both in the H-2 diluted and the undiluted a-Si:H films. In addition, a noticeable difference of growth behavior between the H-2 diluted and the undiluted a-Si:H films was observed. To preclude effects caused by the incorporated hydrogens, the samples were annealed for sufficient dehydrogenation, which was verified by Fourier transform infrared spectroscopy (FTIR). Even after this dehydrogenation, there still remained a difference between the H-2 diluted and the undiluted samples, also, the evolution of the (epsilon(r), epsilon(i)) peak positions remained in the same relation as before the annealing. A simple chemical-alloy effect between silicon and hydrogen cannot explain these phenomena which may be a result of changes in the amorphous network. It is presumed that the structure of the amorphous network in the initial-growth stage is different from that of the amorphous network and the structure difference is enhanced by H-2 addition. (C) 2000 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2000-09
Language
English
Article Type
Article
Keywords

TIME SPECTROSCOPIC ELLIPSOMETRY; SILICON FILMS; INFRARED ELLIPSOMETRY; KINETIC ELLIPSOMETRY; DISPERSION-RELATIONS; INSITU ELLIPSOMETRY; HYDROGEN DILUTION; ABSORPTION; SEMICONDUCTORS; NUCLEATION

Citation

JOURNAL OF NON-CRYSTALLINE SOLIDS, v.275, no.1-2, pp.59 - 64

ISSN
0022-3093
URI
http://hdl.handle.net/10203/77375
Appears in Collection
EE-Journal Papers(저널논문)
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