Highly stable and textured hydrogenated ZnO thin films

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dc.contributor.authorMyong, SYko
dc.contributor.authorLim, Koeng Suko
dc.date.accessioned2007-07-02T08:04:58Z-
dc.date.available2007-07-02T08:04:58Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-05-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.82, pp.3026 - 3028-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/766-
dc.description.abstractWe investigated intentionally hydrogenated zinc oxide (ZnO:H) fabricated by combining photoassisted metalorganic chemical vapor deposition and mercury-sensitized hydrogen addition methods. We found that intentionally incorporated hydrogen plays an important role in n-type conduction as a donor, improving free carrier concentration and electrical stability. We simultaneously obtained improved surface roughness of the ZnO:H film due to an enhancement of (11 (2) over bar0) orientation. The high-quality ZnO:H film is promising as a back reflector material for thin-film solar cells. (C) 2003 American Institute of Physics.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectSHALLOW DONOR-
dc.subjectSOLAR-CELLS-
dc.subjectZINC-OXIDE-
dc.subjectINTERFACE-
dc.subjectSILICON-
dc.titleHighly stable and textured hydrogenated ZnO thin films-
dc.typeArticle-
dc.identifier.wosid000182570000030-
dc.identifier.scopusid2-s2.0-0037851988-
dc.type.rimsART-
dc.citation.volume82-
dc.citation.beginningpage3026-
dc.citation.endingpage3028-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLim, Koeng Su-
dc.contributor.nonIdAuthorMyong, SY-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusSHALLOW DONOR-
dc.subject.keywordPlusSOLAR-CELLS-
dc.subject.keywordPlusZINC-OXIDE-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordPlusSILICON-
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