DC Field | Value | Language |
---|---|---|
dc.contributor.author | Koh, SK | ko |
dc.contributor.author | Yoon, YS | ko |
dc.contributor.author | Kim, KH | ko |
dc.contributor.author | Jung, HJ | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.date.accessioned | 2013-03-03T02:09:43Z | - |
dc.date.available | 2013-03-03T02:09:43Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-05 | - |
dc.identifier.citation | THIN SOLID FILMS, v.278, no.1-2, pp.45 - 48 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/76648 | - |
dc.description.abstract | Nozzle-type partially ionized beam deposition of Cu thin films at a system pressure of 5 x 10(-6) to 7 x 10(-6) Torr was conducted in order to fabricate Cu metallization with high-quality Cu/Si interfaces. In order to prevent diffusion of the Cu toward the Si and silicide formation, the depositions with various acceleration voltages were performed at room temperature. X-ray diffraction patterns showed all the as-grown films having the [111] Cu direction normal to the (100) Si plane regardless of the acceleration voltage. Anger electron spectroscopy demonstrated that there was no residual carbon detection in the bulk of the as-grown films. The thickness of the all as-grown Cu films was 2 000 Angstrom as confirmed by low-magnitude cross-sectional transmission electron microscopy, i.e. growth rates of the Cu film by partially ionized beam deposition at room temperature were almost independent of the acceleration voltage. Furthermore, cross-sectional transmission electron microscopy showed a sharp Cu/Si interface and large-grain polycrystalline Cu films with twin defects. Atomic force microscopy under ambient conditions showed all the films had very smooth surfaces which were greatly reduced with the acceleration voltage. A scratch test showed good adhesion in all the films. These results indicate that the nozzle-type partially ionized beam deposition at room temperature can be used for Cu thin film metallization for semiconducting applications. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA LAUSANNE | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | COPPER | - |
dc.title | Room-temperature growth of Cu thin films by nozzle-type partially ionized beam deposition with various acceleration voltages | - |
dc.type | Article | - |
dc.identifier.wosid | A1996UV53000009 | - |
dc.identifier.scopusid | 2-s2.0-0030142532 | - |
dc.type.rims | ART | - |
dc.citation.volume | 278 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 45 | - |
dc.citation.endingpage | 48 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.identifier.doi | 10.1016/0040-6090(95)08143-7 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Koh, SK | - |
dc.contributor.nonIdAuthor | Yoon, YS | - |
dc.contributor.nonIdAuthor | Kim, KH | - |
dc.contributor.nonIdAuthor | Jung, HJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | copper | - |
dc.subject.keywordAuthor | deposition process | - |
dc.subject.keywordAuthor | interfaces | - |
dc.subject.keywordAuthor | metallization | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | COPPER | - |
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