Dramatic improvement of performance of visible hydrogenated amorphous silicon carbide based p-i-n thin-film light-emitting diodes by two-step hydrogenation

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dc.contributor.authorLee, JWko
dc.contributor.authorLim, Koeng Suko
dc.date.accessioned2007-07-02T07:04:07Z-
dc.date.available2007-07-02T07:04:07Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1996-07-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.69, no.4, pp.547 - 549-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/762-
dc.description.abstractThe effects of two-step hydrogenation on the performance of visible p-i-n thin-film light-emitting diode (TFLED) have been investigated. The TFLEDs were fabricated by a photochemical vapor deposition (CVD) method, A hydrogenation process was performed in two steps: One was an in situ hydrogenation process using a photo-CVD system and the other an ex situ hydrogenation process using a plasma apparatus after TFLED fabrication. It was found that the performance of visible a-SiC:H-based p-i-n TFLEDs was drastically improved by a two-step hydrogenation process. The threshold voltage decreased by about 3 V, the electroluminescence peak shifted towards a shorter wavelength, from 680 to 590 nm, add the brightness increased from 1.3 to 128 cd/m(2). (C) 1996 American Institute of Physics.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.subjectLAYERS-
dc.titleDramatic improvement of performance of visible hydrogenated amorphous silicon carbide based p-i-n thin-film light-emitting diodes by two-step hydrogenation-
dc.typeArticle-
dc.identifier.wosidA1996WB36400037-
dc.type.rimsART-
dc.citation.volume69-
dc.citation.issue4-
dc.citation.beginningpage547-
dc.citation.endingpage549-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLim, Koeng Su-
dc.contributor.nonIdAuthorLee, JW-
dc.type.journalArticleArticle-
dc.subject.keywordPlusLAYERS-
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