Dependence of tunneling magnetoresistance on CoFe interfacial layer thickness in NiFe/Al2O3/NiFe tunnel junctions

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dc.contributor.authorPark, Byong Gukko
dc.contributor.authorLee, Taek Dongko
dc.date.accessioned2013-03-03T00:27:21Z-
dc.date.available2013-03-03T00:27:21Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-09-
dc.identifier.citationIEEE TRANSACTIONS ON MAGNETICS, v.35, no.5, pp.2919 - 2921-
dc.identifier.issn0018-9464-
dc.identifier.urihttp://hdl.handle.net/10203/76243-
dc.description.abstractMagnetic tunnel junctions of Ta/Ni-81/Fe-19/Fe50Mn50/Ni81Fe19/Co50Fe50/Al2O3/Co50Fe50/Ni81Fe19 were fabricated by a magnetron sputtering system. We have studied the change of tunneling magnetoresistance(MR) ratio and junction resistance as a function of CoFe interfacial layer thickness. The MR ratio rapidly increased and slowly decreased as the CoFe layer thickness increased. The junction resistance increased with the introduction of CoFe layer. The increase is due to more uniform Al layer formation on a CoFe layer than a NiFe layer.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleDependence of tunneling magnetoresistance on CoFe interfacial layer thickness in NiFe/Al2O3/NiFe tunnel junctions-
dc.typeArticle-
dc.identifier.wosid000083151100222-
dc.identifier.scopusid2-s2.0-0033184207-
dc.type.rimsART-
dc.citation.volume35-
dc.citation.issue5-
dc.citation.beginningpage2919-
dc.citation.endingpage2921-
dc.citation.publicationnameIEEE TRANSACTIONS ON MAGNETICS-
dc.contributor.localauthorPark, Byong Guk-
dc.contributor.localauthorLee, Taek Dong-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorCoFe interlayer-
dc.subject.keywordAuthorplasma oxidation-
dc.subject.keywordAuthorsurface roughness-
dc.subject.keywordAuthortunneling junction magnetoresistance-
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