TM scattering from hollow and dielectric-filled semielliptic channels with arbitrary eccentricity in a perfectly conducting plane

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dc.contributor.authorByun, WJko
dc.contributor.authorYu, Jong-Wonko
dc.contributor.authorMyung, Noh-Hoonko
dc.date.accessioned2013-03-02T23:40:56Z-
dc.date.available2013-03-02T23:40:56Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-09-
dc.identifier.citationIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.46, no.9, pp.1336 - 1339-
dc.identifier.issn0018-9480-
dc.identifier.urihttp://hdl.handle.net/10203/76051-
dc.description.abstractThe behavior of TM wave scattering from hollow and dielectric-filled semielliptic channels in a perfectly conducting substrate is investigated. The scattered field is represented in terms of an infinite series of Mathieu functions with unknown coefficients, By applying the separation of variables and employing the partial orthogonality of the first-kind angular Mathieu functions, the unknown coefficients are obtained. Numerical results are given for the scattered-field patterns by the channels with different eccentricities and permittivities.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectELLIPTIC WAVE-GUIDE-
dc.titleTM scattering from hollow and dielectric-filled semielliptic channels with arbitrary eccentricity in a perfectly conducting plane-
dc.typeArticle-
dc.identifier.wosid000075610900025-
dc.identifier.scopusid2-s2.0-0032166732-
dc.type.rimsART-
dc.citation.volume46-
dc.citation.issue9-
dc.citation.beginningpage1336-
dc.citation.endingpage1339-
dc.citation.publicationnameIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES-
dc.contributor.localauthorYu, Jong-Won-
dc.contributor.localauthorMyung, Noh-Hoon-
dc.contributor.nonIdAuthorByun, WJ-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorelectromagnetic scattering-
dc.subject.keywordAuthorMathieu functions-
dc.subject.keywordAuthorsemielliptic channel-
dc.subject.keywordPlusELLIPTIC WAVE-GUIDE-
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