DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bidnyk, S | ko |
dc.contributor.author | Little, BD | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Krasinski, J | ko |
dc.contributor.author | Song, JJ | ko |
dc.contributor.author | Yang, W | ko |
dc.contributor.author | McPherson, SA | ko |
dc.date.accessioned | 2013-03-02T23:31:48Z | - |
dc.date.available | 2013-03-02T23:31:48Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-10 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.73, no.16, pp.2242 - 2244 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/76019 | - |
dc.description.abstract | Laser action was observed in GaN pyramids under strong optical pumping at room temperature. The pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon substrate by metal-organic chemical vapor deposition. Each pyramid had a 15-mu m-wide hexagonal base and was on average 15 mu m in height. The pyramids were individually pumped, imaged, and spectrally analyzed through a high-magnification telescope system using a high-density pulsed excitation source. Under high levels of optical pumping, multimode laser at room temperature was observed. The integrated emission intensity for both spontaneous and lasing peaks was studied as a function of excitation power density. The effects of pyramid geometry and short-pulse excitation on the multimode nature of laser oscillations inside of the pyramids is discussed. This study suggests that GaN microstructures could potentially be used as pixel elements and high-density two-dimensional laser arrays. (C) 1998 American Institute of Physics. [S0003-6951(98)02742-9]. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | VAPOR-PHASE EPITAXY | - |
dc.subject | SAPPHIRE | - |
dc.title | Laser action in GaN pyramids grown on, (111) silicon by selective lateral overgrowth | - |
dc.type | Article | - |
dc.identifier.wosid | 000076427800004 | - |
dc.identifier.scopusid | 2-s2.0-0032547594 | - |
dc.type.rims | ART | - |
dc.citation.volume | 73 | - |
dc.citation.issue | 16 | - |
dc.citation.beginningpage | 2242 | - |
dc.citation.endingpage | 2244 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.121689 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Bidnyk, S | - |
dc.contributor.nonIdAuthor | Little, BD | - |
dc.contributor.nonIdAuthor | Krasinski, J | - |
dc.contributor.nonIdAuthor | Song, JJ | - |
dc.contributor.nonIdAuthor | Yang, W | - |
dc.contributor.nonIdAuthor | McPherson, SA | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | SAPPHIRE | - |
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