Electrical properties of a-axis aligned lanthanum-modified lead titanate thin films prepared using sol-gel process

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The (100) epitaxial lanthanum-modified lead titanate (PLT) film was fabricated using sol-gel method on platinized MgO substrates. The substrate used was Pt(100)/Ti(100)/MgO where Pt and Ti layers had been sputter-deposited at 600 degrees C. We used the direct furnace insertion method and the crystallization temperature of 700 degrees C in order to fabricate the epitaxial film. The phase of the film was examined using x-ray diffraction (XRD) and the film orientation was examined by pole figure and x-ray rocking curves. The epitaxial PLT thin film had higher dielectric constant and better ferroelectricity and fatigue resistance than the polycrystalline films. However, it shows higher leakage current than the polycrystalline film.
Publisher
KOREAN INST METALS MATERIALS
Issue Date
1997
Language
English
Article Type
Article
Keywords

EPITAXIAL-GROWTH; MECHANISMS; RETENTION; MEMORIES

Citation

METALS AND MATERIALS-KOREA, v.3, no.4, pp.277 - 282

ISSN
1225-9438
URI
http://hdl.handle.net/10203/75927
Appears in Collection
MS-Journal Papers(저널논문)
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