Hydrogen passivation of visible p-i-n type thin-film light-emitting diodes

Abstract

The effects of hydrogen passivation on the performance of visible p-i-n thin-film light-emitting diodes (TFLEDs) have been investigated. The TFLEDs were fabricated using a photochemical vapor deposition method. The hydrogenation process was performed using an inductively coupled plasma system at a rf power of 800 W and a process pressure of 20 mTorr for 30 min. It was found that hydrogenation dramatically improved the performance of these TFLEDs. The threshold voltage was decreased by about 1 V, the electroluminescence (EL) peak shifted from 704.5 to 689 nm, the EL intensity increased by a factor of 3, and the brightness-increased from 1 to 24 cd/m(2) by 24 times. (C) 1996 American Institute of Physics.