Electrical properties of BST thin films prepared by ECR-PEMOCVD

Abstract

(Ba48Sr52)TiO3 thin films were deposited on Pt/SiO2/Si using ECR-PEMOCVD. The NH2 carrier gas was used to restrict the degradation of MO-(TMHD)(2) sources during deposition process and annealing was performed to enhance the electrical properties of the films after deposition. The dielectric loss and leakage current density of the film were improved with increasing post annealing time. The leakage behavior of films, which were heat treated for different times, was analyzed as a function of both temperature and field. Based on the field and temperature dependence of the leakage properties, Schottky barrier heights were calculated.