Pb(Zr,Ti)O-3 films fabrication by sol-gel method for piezoelectric actuated device

Abstract

Pb(Zr-0.52,Ti-0.48)O-3 (PZT) films with conducting oxides, (La-0.5,Sr-0.5)CoO3(LSCO), have been fabricated by a sol-gel method on SiO2 made by Plasma Enhanced Chemical Vapor Deposition (PECVD). PZT films were made using a 1-3 propanediol based precursor solution which has a high viscosity and boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxide and Zr-propoxide are partially substituted with acetylacetone. Crack free PZT films (0.8-1 mum) have been successfully fabricated at crystallization temperatures above 700 degreesC. Dielectric constant and dielectric loss of the PZT films were 900 similar to 1200 and 2 similar to5%. respectively. The piezoelectric coefficient of PZT films was measured by a modified Mach Zehnder Interferometer. The piezoelectric constant d(33) of the PZT films constrained by a substrate was 200 pm/V at 100kV/cm.