DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, CH | ko |
dc.contributor.author | Lim, Koeng Su | ko |
dc.date.accessioned | 2007-07-02T06:18:07Z | - |
dc.date.available | 2007-07-02T06:18:07Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-07 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.75, no.4, pp.569 - 571 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/754 | - |
dc.description.abstract | The current transport mechanisms in boron-doped amorphous diamond-like carbon (p-a-DLC:H) used as part of the p layer of hydrogenated amorphous silicon (a-Si:H) solar cells are investigated by studying the temperature dependence of the dark current-voltage characteristics of the solar cell. The cell structure is glass/SnO2/p-a-DLC:H/p-a-SiC:H/i-a-Si:H/n-mu c-Si:H/Al. The temperature dependence of the reverse saturation current and the ideality factor shows that carriers transport dominantly over the p-a-DLC:H by thermionic emission at higher temperatures above about 300 K and through the tunneling process by a hopping mechanism in the p-a-DLC:H at lower temperatures. Using the Schottky barrier model, it is shown that the lowering of the Schottky barrier height by inserting the interfacial p-a-DLC:H between the SnO2 and p-a-SiC:H causes the open circuit voltage and the short wavelength response of the cells to be enhanced. (C) 1999 American Institute of Physics. [S0003-6951(99)01730-1]. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Carrier transport through boron-doped amorphous diamond-like carbon p layer of amorphous silicon based p-i-n solar cells | - |
dc.type | Article | - |
dc.identifier.wosid | 000081570400045 | - |
dc.identifier.scopusid | 2-s2.0-0032606414 | - |
dc.type.rims | ART | - |
dc.citation.volume | 75 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 569 | - |
dc.citation.endingpage | 571 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.124444 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.contributor.nonIdAuthor | Lee, CH | - |
dc.type.journalArticle | Article | - |
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