Interface reactions between manganese zinc ferrite single crystals and SiO2-PbO-ZnO-MnO systems

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dc.contributor.authorJe, HJko
dc.contributor.authorKim, Do Kyungko
dc.contributor.authorByeon, SCko
dc.contributor.authorHong, KSko
dc.contributor.authorSon, YBko
dc.contributor.authorJang, SDko
dc.contributor.authorKim, CHko
dc.date.accessioned2013-03-02T20:46:04Z-
dc.date.available2013-03-02T20:46:04Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1996-06-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.6A, pp.3553 - 3558-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/75450-
dc.description.abstractThe interface reactions between Mn-Zn ferrite single crystals and SiO2-PbO-ZnO-MnO systems were investigated using a scanning electron microscope, an electron probe microanalyzer, and an X-ray diffractometer. No intermediate phase was formed at the interface after reaction at 1000 degrees C, but the concentration profiles of Zn and Mn ion at the ferrite adjacent to the interface were markedly affected by their atomic ratio in the glass. When 6 mol% MnO and 4 mol% ZnO, the ratio of which was similar to that in the ferrite, were added to the SiO2-PbO binary system, the concentration of Zn ion was increased at the ferrite adjacent to the interface. It was confirmed that the diffusion rate of Mn ion in the glass melt was higher than that of Zn ion. Therefore, the enrichment of Zn ions was considered to be caused by the higher dissolution rate of Mn ion into the glass from the ferrite than that of Zn ion. It was found that when 7 mol% MnO and 3 mol% ZnO, the ratio of which was higher than that in the ferrite, were contained in the glass, the concentrations of Zn and Mn ions hardly changed at the ferrite adjacent to the interface.-
dc.languageEnglish-
dc.publisherJAPAN J APPLIED PHYSICS-
dc.subjectGLASS-
dc.titleInterface reactions between manganese zinc ferrite single crystals and SiO2-PbO-ZnO-MnO systems-
dc.typeArticle-
dc.identifier.wosidA1996UX14000049-
dc.identifier.scopusid2-s2.0-0030173524-
dc.type.rimsART-
dc.citation.volume35-
dc.citation.issue6A-
dc.citation.beginningpage3553-
dc.citation.endingpage3558-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS-
dc.contributor.localauthorKim, Do Kyung-
dc.contributor.nonIdAuthorJe, HJ-
dc.contributor.nonIdAuthorByeon, SC-
dc.contributor.nonIdAuthorHong, KS-
dc.contributor.nonIdAuthorSon, YB-
dc.contributor.nonIdAuthorJang, SD-
dc.contributor.nonIdAuthorKim, CH-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorferrite-
dc.subject.keywordAuthorglass-
dc.subject.keywordAuthorinterface reaction-
dc.subject.keywordAuthorconcentration profile-
dc.subject.keywordAuthordissolution-
dc.subject.keywordAuthordiffusion-
dc.subject.keywordAuthorsecond phase-
dc.subject.keywordAuthoratomic ratio-
dc.subject.keywordPlusGLASS-
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