Fabrication of ZnO-based film bulk acoustic resonator devices using W/SiO(2) multilayer reflector

Cited 16 time in webofscience Cited 0 time in scopus
  • Hit : 362
  • Download : 0
A ZnO-based fdm bulk acoustic resonator (FBAR) with a W/SiO2 multilayer reflector has been fabricated using a two-step ZnO deposition. The FEAR showed a large return loss of 35dB at similar to 2GHz and a high quality factor (high-Q) of similar to 4000. The resonance characteristics depended largely on the multilayer reflector and ZnO film.
Publisher
INST ENGINEERING TECHNOLOGY-IET
Issue Date
2000-08
Language
English
Article Type
Article
Citation

ELECTRONICS LETTERS, v.36, no.16, pp.1435 - 1437

ISSN
0013-5194
URI
http://hdl.handle.net/10203/75390
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 16 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0