DC Field | Value | Language |
---|---|---|
dc.contributor.author | Myong, SY | ko |
dc.contributor.author | Kim, SS | ko |
dc.contributor.author | Lim, Koeng Su | ko |
dc.date.accessioned | 2007-07-02T05:33:27Z | - |
dc.date.available | 2007-07-02T05:33:27Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-02 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.95, pp.1525 - 1530 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/747 | - |
dc.description.abstract | We investigated a double silicon-carbide p-layer structure consisting of a undiluted p-type amorphous silicon-carbide (p-a-SiC:H) window layer and a hydrogen diluted p-a-SiC:H buffer layer to improve a pin-type amorphous silicon based solar cell. Solar cells using a lightly boron-doped (1000 ppm) buffer layer with a high conductivity, low absorption, well-ordered film structure, and slow deposition rate improves the open-circuit voltage (V-oc), short-circuit current density, and fill factor by reducing recombination in the buffer layer and at p/buffer and buffer/i interfaces. It is found that a natural hydrogen treatment generated throughout the buffer layer deposition onto the p-a-SiC:H window layer is an advantage of this double p-layer structure. We achieved a considerable initial conversion efficiency of 11.2% without any back reflector. (C) 2004 American Institute of Physics. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | PHOTOCHEMICAL VAPOR-DEPOSITION | - |
dc.subject | MICROCRYSTALLINE SILICON | - |
dc.subject | HYDROGEN-DILUTION | - |
dc.subject | OPTICAL FUNCTIONS | - |
dc.subject | ATOMIC-HYDROGEN | - |
dc.subject | CARBON SOURCE | - |
dc.subject | THIN-FILMS | - |
dc.subject | SI-H | - |
dc.subject | INTERFACE | - |
dc.subject | PLASMA | - |
dc.title | Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide p-layer structure | - |
dc.type | Article | - |
dc.identifier.wosid | 000188281800110 | - |
dc.identifier.scopusid | 2-s2.0-1142304477 | - |
dc.type.rims | ART | - |
dc.citation.volume | 95 | - |
dc.citation.beginningpage | 1525 | - |
dc.citation.endingpage | 1530 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.1639140 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.contributor.nonIdAuthor | Myong, SY | - |
dc.contributor.nonIdAuthor | Kim, SS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | PHOTOCHEMICAL VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | MICROCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | HYDROGEN-DILUTION | - |
dc.subject.keywordPlus | OPTICAL FUNCTIONS | - |
dc.subject.keywordPlus | ATOMIC-HYDROGEN | - |
dc.subject.keywordPlus | CARBON SOURCE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SI-H | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | PLASMA | - |
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