DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ho-Gi | ko |
dc.contributor.author | Lee, Seaung-Suk | ko |
dc.date.accessioned | 2013-03-02T14:13:26Z | - |
dc.date.available | 2013-03-02T14:13:26Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995 | - |
dc.identifier.citation | JOURNAL OF ELECTRONIC MATERIALS, v.24, no.8, pp.1023 - 1027 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | http://hdl.handle.net/10203/73918 | - |
dc.description.abstract | La-modified lead titanate (PLT) thin films were prepared by hot-wall type low pressure-metalorganic chemical vapor deposition method. Pb(dpm)(2), La(dpm)(3), and titanium tetraisopropoxide were used as source materials. The films were deposited at 500 degrees C under the low pressure of 1000 mTorr and then annealed at 650 degrees C for 10 min in oxygen ambient. Sputter-deposited platinum electrodes and 180 nm thick PLT thin films were employed to form MIM capacitors with the best combination of high charge storage density (26.7 mu C/cm(2) at 3V) and low leakage current density (1.5 x 10(-7) A/cm(2) at 3V). The measured dielectric constant and dielectric loss were 1000 similar to 1200 and 0.06 similar to 0.07 at zero bias and 100 kHz, respectively. | - |
dc.language | English | - |
dc.publisher | MINERALS METALS MATERIALS SOC | - |
dc.title | PREPARATION OF (PB0.88LA0.12)TIO3 THIN-FILMS FOR DYNAMIC RANDOM-ACCESS MEMORY BY LOW PRESSURE-METALORGANIC CHEMICAL-VAPOR-DEPOSITION | - |
dc.type | Article | - |
dc.identifier.wosid | A1995RN05400017 | - |
dc.identifier.scopusid | 2-s2.0-0029356894 | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 1023 | - |
dc.citation.endingpage | 1027 | - |
dc.citation.publicationname | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.identifier.doi | 10.1007/BF02652977 | - |
dc.contributor.localauthor | Kim, Ho-Gi | - |
dc.contributor.nonIdAuthor | Lee, Seaung-Suk | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | DYNAMIC RANDOM ACCESS MEMORY (DRAM) | - |
dc.subject.keywordAuthor | PLT THIN FILM | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | FERROELECTRIC | - |
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