Highly reliable ECR N2O-plasma polyoxide grown on heavily phosphorus-doped polysilicon films

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dc.contributor.authornae-in leeko
dc.contributor.authorjin-woo leeko
dc.contributor.authorchul-hi hanko
dc.date.accessioned2013-02-28T05:48:36Z-
dc.date.available2013-02-28T05:48:36Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-
dc.identifier.citationJOURNAL OF ELECTRONIC MATERIALS, v.28, no.12, pp.L31 - L33-
dc.identifier.issn0361-5235-
dc.identifier.urihttp://hdl.handle.net/10203/73092-
dc.description.abstractReliability of polyoxide grown by electron cyclotron resonance (ECR) N2O-plasma on heavily phosphorus-doped polysilicon has been investigated for the interpoly dielectrics (IPDs) of nonvolatile memories (NVMs). ECR N2O-plasma polyoxide grown on polysilicon with phosphorus of 1 x 10(21) cm(-3) exhibits a significantly high breakdown field of 10 MV/cm and low electron trapping rate of 0.5 V, which are regardless of phosphorus concentration. The improvements are attributed to the smooth polyoxide/polysilicon interface, low phosphorus concentration, and nitrogen-rich layer with strong silicon-nitrogen bonds at the polyoxide/polysilicon interface.-
dc.languageEnglish-
dc.publisherMINERALS METALS MATERIALS SOC-
dc.subjectELECTRICAL CHARACTERISTICS-
dc.titleHighly reliable ECR N2O-plasma polyoxide grown on heavily phosphorus-doped polysilicon films-
dc.typeArticle-
dc.identifier.wosid000084449600029-
dc.identifier.scopusid2-s2.0-0033281262-
dc.type.rimsART-
dc.citation.volume28-
dc.citation.issue12-
dc.citation.beginningpageL31-
dc.citation.endingpageL33-
dc.citation.publicationnameJOURNAL OF ELECTRONIC MATERIALS-
dc.identifier.doi10.1007/s11664-999-0144-5-
dc.contributor.localauthorchul-hi han-
dc.contributor.nonIdAuthornae-in lee-
dc.contributor.nonIdAuthorjin-woo lee-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorECR N2O-plasma polyoxide-
dc.subject.keywordAuthorsilicon-
dc.subject.keywordAuthorphosphorus doped polysilicon-
dc.subject.keywordPlusELECTRICAL CHARACTERISTICS-
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