DC Field | Value | Language |
---|---|---|
dc.contributor.author | nae-in lee | ko |
dc.contributor.author | jin-woo lee | ko |
dc.contributor.author | chul-hi han | ko |
dc.date.accessioned | 2013-02-28T05:48:36Z | - |
dc.date.available | 2013-02-28T05:48:36Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | JOURNAL OF ELECTRONIC MATERIALS, v.28, no.12, pp.L31 - L33 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | http://hdl.handle.net/10203/73092 | - |
dc.description.abstract | Reliability of polyoxide grown by electron cyclotron resonance (ECR) N2O-plasma on heavily phosphorus-doped polysilicon has been investigated for the interpoly dielectrics (IPDs) of nonvolatile memories (NVMs). ECR N2O-plasma polyoxide grown on polysilicon with phosphorus of 1 x 10(21) cm(-3) exhibits a significantly high breakdown field of 10 MV/cm and low electron trapping rate of 0.5 V, which are regardless of phosphorus concentration. The improvements are attributed to the smooth polyoxide/polysilicon interface, low phosphorus concentration, and nitrogen-rich layer with strong silicon-nitrogen bonds at the polyoxide/polysilicon interface. | - |
dc.language | English | - |
dc.publisher | MINERALS METALS MATERIALS SOC | - |
dc.subject | ELECTRICAL CHARACTERISTICS | - |
dc.title | Highly reliable ECR N2O-plasma polyoxide grown on heavily phosphorus-doped polysilicon films | - |
dc.type | Article | - |
dc.identifier.wosid | 000084449600029 | - |
dc.identifier.scopusid | 2-s2.0-0033281262 | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | L31 | - |
dc.citation.endingpage | L33 | - |
dc.citation.publicationname | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.identifier.doi | 10.1007/s11664-999-0144-5 | - |
dc.contributor.localauthor | chul-hi han | - |
dc.contributor.nonIdAuthor | nae-in lee | - |
dc.contributor.nonIdAuthor | jin-woo lee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | ECR N2O-plasma polyoxide | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | phosphorus doped polysilicon | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERISTICS | - |
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