DC Field | Value | Language |
---|---|---|
dc.contributor.author | robert tu | ko |
dc.contributor.author | joseph c. king | ko |
dc.contributor.author | hyungcheol shin | ko |
dc.contributor.author | chenming hu | ko |
dc.date.accessioned | 2013-02-28T05:44:23Z | - |
dc.date.available | 2013-02-28T05:44:23Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-09 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.44, no.9, pp.1393 - 1400 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/73072 | - |
dc.description.abstract | Advanced processing techniques such as plasma etching and ion implantation can damage the gate oxides of MOS devices and thus pose a problem to circuit reliability. In this paper, we present a simulator which predicts oxide failure rates during and after processing and pinpoints strong charging current locations in the layout where changes can be made to improve circuit hot-carrier reliability, We present the models and experimental results used to develop the simulator and demonstrate the usefulness of this simulator. | - |
dc.language | English | - |
dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
dc.subject | THIN-OXIDE | - |
dc.subject | PLASMA | - |
dc.title | Simulating Process-Induced Gate Oxide Damage in Circuits | - |
dc.type | Article | - |
dc.identifier.wosid | A1997XR10800007 | - |
dc.identifier.scopusid | 2-s2.0-0031233975 | - |
dc.type.rims | ART | - |
dc.citation.volume | 44 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1393 | - |
dc.citation.endingpage | 1400 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.contributor.localauthor | hyungcheol shin | - |
dc.contributor.nonIdAuthor | robert tu | - |
dc.contributor.nonIdAuthor | joseph c. king | - |
dc.contributor.nonIdAuthor | chenming hu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-OXIDE | - |
dc.subject.keywordPlus | PLASMA | - |
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