Drying temperature effects on the electro-optic coefficients of PZT thin films

Abstract

PZT thin films were fabricated on ITO/glass substrates using sol-gel method. The main processing variable was the drying temperature : 300, 350, 450 and 500 degrees C. The microstructure and electric properties (polarization and dielectric constant) were investigated. The electric properties were dependent on the perovskite phase content and the grain size affected by the nucleation of perovskite phase. The two-beams polarization interferometer was used for the measurement of electro-optic coefficients of PZT thin films, and these values were analyzed by comparing the electric properties.