Substrate resistance effect on charge-pumping current in polycrystalline silicon thin film transistors

Abstract

A model is proposed to explain the pulse transition time dependence of the charge-pumping current in polycrystalline silicon thin film transistors (poly-Si TT;Ts). When the gate pulse transition times are short, the charge-pumping current is increased abnormally due to the substrate resistance of poly-Si TFTs. The model is in good agreement with measured charge-pumping current, which enables accurate trap characterization.