Substrate-Dependent Growth of Polycrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using SiF 4 and H 2 Gases

Cited 6 time in webofscience Cited 0 time in scopus
  • Hit : 242
  • Download : 0
The growth of polycrystalline silicon films deposited on two different types of substrates by rf plasma-enhanced chemical vapor deposition using SiF4 and H-2 gases was investigated. We observed that on the glass substrates, small grains grew and grain boundaries were not clear at the early stage of deposition (less than or equal to 100 nm) before the growth of a columnar crystalline layer. However, on the SiO2 substrates, alter the growth of a thin amorphous layer (similar to 10 nm), direct growth of a columnar crystalline layer was observed. Surface roughness of the films increases with the film thickness on both substrates and is larger on glass substrate than on SiO2 substrate. The growth mechanism of the poly-Si films deposited on these two types of substrates was also discussed.
Publisher
Japan Soc Applied Physics
Issue Date
1995
Language
English
Article Type
Article
Keywords

LOW-TEMPERATURE; TRANSISTORS

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS, v.34, no.9A, pp.4673 - 4676

ISSN
0021-4922
URI
http://hdl.handle.net/10203/72805
Appears in Collection
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 6 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0