DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이성훈 | ko |
dc.contributor.author | 이희철 | ko |
dc.contributor.author | 신형철 | ko |
dc.contributor.author | 김충기 | ko |
dc.date.accessioned | 2013-02-28T04:27:20Z | - |
dc.date.available | 2013-02-28T04:27:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-01 | - |
dc.identifier.citation | 새물리, v.11, no.특별호, pp.S75 - S79 | - |
dc.identifier.issn | 0374-4914 | - |
dc.identifier.uri | http://hdl.handle.net/10203/72777 | - |
dc.language | Korean | - |
dc.publisher | 한국물리학회 | - |
dc.title | HgCdTe 표면 보호막의 전기적 특성 향상을 위한 표면처리 | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 특별호 | - |
dc.citation.beginningpage | S75 | - |
dc.citation.endingpage | S79 | - |
dc.citation.publicationname | 새물리 | - |
dc.contributor.localauthor | 이희철 | - |
dc.contributor.localauthor | 신형철 | - |
dc.contributor.nonIdAuthor | 이성훈 | - |
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