A Nano-structure Memory with SOI Edge Channel and A Nono Dot
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | geunsook park | ko |
| dc.contributor.author | sangyeon han | ko |
| dc.contributor.author | hyungcheol shin | ko |
| dc.date.accessioned | 2013-02-28T04:21:59Z | - |
| dc.date.available | 2013-02-28T04:21:59Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1998-12 | - |
| dc.identifier.citation | 전자공학회논문지, v.35, no.12, pp.48 - 52 | - |
| dc.identifier.issn | 1016-135X | - |
| dc.identifier.uri | http://hdl.handle.net/10203/72758 | - |
| dc.language | English | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | A Nano-structure Memory with SOI Edge Channel and A Nono Dot | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 35 | - |
| dc.citation.issue | 12 | - |
| dc.citation.beginningpage | 48 | - |
| dc.citation.endingpage | 52 | - |
| dc.citation.publicationname | 전자공학회논문지 | - |
| dc.contributor.localauthor | hyungcheol shin | - |
| dc.contributor.nonIdAuthor | geunsook park | - |
| dc.contributor.nonIdAuthor | sangyeon han | - |
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