SOI 양자소자 제작과 단전자터널링 특성SOI Quantum-Device Fabriacion and Single-Electron Tunneling Characteristics
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 신형철 | ko |
| dc.contributor.author | Lee, Kwyro | ko |
| dc.date.accessioned | 2013-02-28T04:04:23Z | - |
| dc.date.available | 2013-02-28T04:04:23Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1998-03 | - |
| dc.identifier.citation | 응용물리, v.11, no.3, pp.310 - 314 | - |
| dc.identifier.issn | 1013-7009 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/72689 | - |
| dc.language | English | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | SOI 양자소자 제작과 단전자터널링 특성 | - |
| dc.title.alternative | SOI Quantum-Device Fabriacion and Single-Electron Tunneling Characteristics | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 11 | - |
| dc.citation.issue | 3 | - |
| dc.citation.beginningpage | 310 | - |
| dc.citation.endingpage | 314 | - |
| dc.citation.publicationname | 응용물리 | - |
| dc.contributor.localauthor | 신형철 | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
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