Structural Properties of GexSi1-x Films Grown on Si(111) Substrate by Using Solid Phase Epitaxy
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | H.S. Kim | ko |
| dc.contributor.author | B.Y. Ahn | ko |
| dc.contributor.author | J.J. Lee | ko |
| dc.contributor.author | K.H. Kim | ko |
| dc.contributor.author | C.K. Choi | ko |
| dc.contributor.author | J.Y. Lee | ko |
| dc.date.accessioned | 2013-02-28T03:58:23Z | - |
| dc.date.available | 2013-02-28T03:58:23Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1998-05 | - |
| dc.identifier.citation | 한국응용물리학회지, v.11, no.4, pp.413 - 418 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/72667 | - |
| dc.language | Korean | - |
| dc.publisher | 한국응용물리학회 | - |
| dc.title | Structural Properties of GexSi1-x Films Grown on Si(111) Substrate by Using Solid Phase Epitaxy | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 11 | - |
| dc.citation.issue | 4 | - |
| dc.citation.beginningpage | 413 | - |
| dc.citation.endingpage | 418 | - |
| dc.citation.publicationname | 한국응용물리학회지 | - |
| dc.contributor.localauthor | J.Y. Lee | - |
| dc.contributor.nonIdAuthor | H.S. Kim | - |
| dc.contributor.nonIdAuthor | B.Y. Ahn | - |
| dc.contributor.nonIdAuthor | J.J. Lee | - |
| dc.contributor.nonIdAuthor | K.H. Kim | - |
| dc.contributor.nonIdAuthor | C.K. Choi | - |
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.