DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JJ | ko |
dc.contributor.author | Park, YS | ko |
dc.contributor.author | Yang, CS | ko |
dc.contributor.author | Kim, HS | ko |
dc.contributor.author | Kim, KH | ko |
dc.contributor.author | Kang, KY | ko |
dc.contributor.author | Kang, TW | ko |
dc.contributor.author | Park, SH | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.date.accessioned | 2013-02-28T03:19:42Z | - |
dc.date.available | 2013-02-28T03:19:42Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-05 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.213, no.1-2, pp.33 - 39 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/72510 | - |
dc.description.abstract | About 0.4 mu m thick GaN films were epitaxially grown on a LaAlO3(1 0 0) substrate by RF plasma-assisted molecular beam epitaxy. In situ reflection high-energy electron diffraction (RHEED) observation showed that the growth mode changed from island to lateral growth. The crystalline quality of the GaN film was characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The epitaxial relationship between GaN and the LaAlO3(100) substrate was [0001]GaN//[100]LaAlO3, [01 (1) over bar 0]GaN//[0 (1) over bar 1]LaAlO3, and [2 (1) over bar (1) over bar 0]GaN//[011]LaAlO3. A lattice mismatch of similar to 3% for the [0 (1) over bar 1] plane was estimated. The GaN film exhibited a near band-edge peak of 3.463 eV by photoluminescence (PL) measurement at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | EPITAXIAL-GROWTH | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | FILMS | - |
dc.subject | NITRIDE | - |
dc.subject | LAYER | - |
dc.subject | DEPOSITION | - |
dc.subject | SAPPHIRE | - |
dc.subject | DEFECTS | - |
dc.title | MBE growth of wurtzite GaN on LaAlO3 (100) substrate | - |
dc.type | Article | - |
dc.identifier.wosid | 000087091300005 | - |
dc.identifier.scopusid | 2-s2.0-0033741839 | - |
dc.type.rims | ART | - |
dc.citation.volume | 213 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 33 | - |
dc.citation.endingpage | 39 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Lee, JJ | - |
dc.contributor.nonIdAuthor | Park, YS | - |
dc.contributor.nonIdAuthor | Yang, CS | - |
dc.contributor.nonIdAuthor | Kim, HS | - |
dc.contributor.nonIdAuthor | Kim, KH | - |
dc.contributor.nonIdAuthor | Kang, KY | - |
dc.contributor.nonIdAuthor | Kang, TW | - |
dc.contributor.nonIdAuthor | Park, SH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | epitaxial growth | - |
dc.subject.keywordAuthor | epitaxial relationship | - |
dc.subject.keywordAuthor | HRTEM | - |
dc.subject.keywordAuthor | PAMBE | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | DEFECTS | - |
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