FTIR study of fluorinated silicon oxide film

Abstract

Fluorinated silicon oxide (SiOF) films were prepared by plasma enhanced chemical vapour deposition (PECVD) and studied by FTIR spectroscopic measurements. As fluorination dosage increased, the band intensity of the SI-F stretching mode was observed to increase but the peak frequency and band width remained unchanged. The Si-O vibrational bands were found to increase in frequency and decrease in band width. The Si-O asymmetric stretching band was analysed. It was found that the average bond angle of Si-O-Si bond increased but the distribution of the bond angles decreased in width as fluorination dosage was increased.