DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheon, SH | ko |
dc.contributor.author | Lee, SC | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.contributor.author | Yoo, KH | ko |
dc.date.accessioned | 2013-02-28T00:06:31Z | - |
dc.date.available | 2013-02-28T00:06:31Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-02 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.2B, pp.849 - 852 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/71631 | - |
dc.description.abstract | Quasi-two-dimensional hole gas in strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are obtained from the self-consistent solution of the Schrodinger-Poisson equations. The calculation results show the dependence of the averaged mass on the measurement temperature and the averaged mass of 0.20 m(0) at T = 4 K. High quality Si/Si0.8Ge0.2/Si p-type modulation-doped quantum well is grown by molecular beam epitaxy and the electrical properties measured. Hall mobility as high as similar to 10,400 cm(2)/V . s with a sheet carrier concentration of similar to 1.1 x 10(12) cm(-2) and an effective mass of similar to 0.30 m(0) is obtained at T = 4 K. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | CHANNEL | - |
dc.subject | LAYER | - |
dc.title | Study of quasi-two-dimensional hole gas in Si/SixGe1-x/Si quantum wells | - |
dc.type | Article | - |
dc.identifier.wosid | A1996UD94100012 | - |
dc.identifier.scopusid | 2-s2.0-0030087284 | - |
dc.type.rims | ART | - |
dc.citation.volume | 35 | - |
dc.citation.issue | 2B | - |
dc.citation.beginningpage | 849 | - |
dc.citation.endingpage | 852 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.contributor.nonIdAuthor | Cheon, SH | - |
dc.contributor.nonIdAuthor | Lee, SC | - |
dc.contributor.nonIdAuthor | Yoo, KH | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | two-dimensional hole gas | - |
dc.subject.keywordAuthor | SiGe | - |
dc.subject.keywordAuthor | self-consistent solution | - |
dc.subject.keywordAuthor | Hall mobility | - |
dc.subject.keywordAuthor | SdH measurement | - |
dc.subject.keywordAuthor | effective mass | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | LAYER | - |
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